Constraints on micro-Raman strain metrology for highly doped strained Si materials
نویسندگان
چکیده
strained Si materials L. O’Reilly, K. Horan, P. J. McNally, N. S. Bennett, N. E. B. Cowern, A. Lankinen, B. J. Sealy, R. M. Gwilliam, T. C. Q. Noakes, and P. Bailey Nanomaterials Processing Laboratory, Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland School of Electrical, Electronic and Computer Engineering, University of Newcastle, Newcastle upon Tyne, NE1 7RU, United Kingdom Micro and Nanosciences, Micronova, Helsinki University of Technology, P.O. Box 3500, FIN-02015 TKK, Finland Surrey Ion Beam Centre, University of Surrey, Guildford GU2 7XH, United Kingdom Medium Energy Ion Scattering Facility, Daresbury Laboratory, Daresbury, Warrington WA4 4AD, United Kingdom
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تاریخ انتشار 2008